Cree to Invest 美金1 Billion to Expand Silicon Carbide Capacity
Advanced manufacturing campus will accelerate industry transition from silicon to silicon carbide to meet EV and 5G market demand
Expansion to generate up to a 30-fold increase in SiC wafer fabrication capacity and 30-fold increase in SiC materials production to meet the expected market growth by 2024
Five-year investment leverages an existing building (“North Fab”) and refurbished 200mm equipment to build state-of-the-art automotive-qualified production facility
Investment: 美金450M for North Fab; 美金450M for materials mega factory; and 美金100M in other investments associated with growing the business
投资：4.5亿美元用在North Fab;4.5亿美元用在材料超等工场(mega factory);1亿美元用在陪伴着营业增加所需要的其它投入
▲ Cree North Fab
DURHAM, N.C., May 7, 2019 – As part of its long-term growth strategy, Cree, Inc. (Nasdaq: CREE) announces it will invest up to 美金1 billion in the expansion of its silicon carbide capacity with the development of a state-of-the-art, automated 200mm silicon carbide fabrication facility and a materials mega factory at its U.S. campus headquarters in Durham, N.C. It marks the company’s largest investment to date in fueling its Wolfspeed silicon carbide and GaN on silicon carbide business. Upon completion in 2024, the facilities will substantially increase the company’s silicon carbide materials capability and wafer fabrication capacity, allowing wide bandgap semiconductor solutions that enable the dramatic technology shifts underway within the automotive, communications infrastructure and industrial markets.
2019年5月7日，美国北卡罗莱纳州达勒姆讯 – Cree, Inc. (Nasdaq: CREE) 公布，作为公司持久增加计谋的一部门，将投资10亿美元用在扩年夜SiC碳化硅产能，在公司美国总部北卡罗莱纳州达勒姆市建造一座采取最早进手艺的主动化200mm SiC碳化硅出产工场和一座材料超等工场。这项标记着公司迄今为止最年夜的投资，将为Wolfspeed SiC碳化硅和GaN-on-SiC碳化硅基氮化镓营业供给动能。在2024年全数落成以后，这些工场将极年夜加强公司SiC碳化硅材料机能和晶圆制造产能，使得宽禁带半导体材料解决方案为汽车、通信举措措施和工业市场带来庞大手艺改变。
“We continue to see great interest from the automotive and communications infrastructure sectors to leverage the benefits of silicon carbide to drive innovation. However, the demand for silicon carbide has long surpassed the available supply. Today, we are announcing our largest-ever investment in production to dramatically increase this supply and help customers deliver transformative products and services to the marketplace,” said Gregg Lowe, CEO of Cree. “This investment in equipment, infrastructure and our workforce is capable of increasing our silicon carbide wafer fabrication capacity up to 30-fold and our materials production by up to 30-fold compared to Q1 of fiscal year 2017, which is when we began the first phase of capacity expansion. We believe this will allow us to meet the expected growth in Wolfspeed silicon carbide material and device demand over the next five years and beyond.”
Cree首席履行官Gregg Lowe师长教师暗示：“我们不竭地看到在汽车和通信举措措施范畴采取SiC碳化硅的优势来驱动立异所发生的庞大效益。可是，现有的供给却远远不克不及够知足我们对SiC碳化硅的需求。今天，我们公布了公司迄今在出产制造的最年夜投资，将年夜幅地晋升供给，帮忙客户为市场供给变化性的产物和办事。这项在装备、根本举措措施、公司人力方面的庞大投入，将为我们显著扩年夜产能。与2017财年第一季度(也就是我们最先扩年夜产能的第一阶段)比拟较，可以或许带来SiC碳化硅晶圆制造产能的30倍增加和材料出产的30倍增加。我们相信这将使得我们可以或许知足Wolfspeed SiC碳化硅材料和器件在将来5年甚至更久远的预期增加。”
The plan delivers additional capacity for its industry-leading Wolfspeed silicon carbide business with the build out of an existing structure as a 253,000 square-foot, 200mm power and RF wafer fabrication facility as an initial step to serve the projected market demand. The new North Fab is designed to be fully automotive qualified and will provide nearly 18 times more surface area for manufacturing than exists today, initially opening with the production of 150mm wafers. The company will convert its existing Durham fabrication and materials facility into a materials mega factory.
这项打算将为业界领先的Wolfspeed SiC碳化硅营业供给附加产能。经由过程增建现有的建筑举措措施，作为面积253,000平方英尺的200mm功率和RF射频晶圆制造工场，迈出知足预期市场需求的第一步。新的North Fab将被设计成可以或许周全知足汽车认证的工场，其出产供给的晶圆概况积将会是今天现有的18倍，刚最先阶段将进行150mm晶圆的出产。公司将把现有在达勒姆的出产和材料工场改变为一座材料超等工场。
“These silicon carbide manufacturing mega-hubs will accelerate the innovation of today’s fastest growing markets by producing solutions that help extend the range and reduce the charge times for electric vehicles, as well as support the rollout of 5G networks around the world,” said Lowe. “We believe that this represents the largest capital investment in the history of silicon carbide and GaN technologies and production with a fiscally responsible approach. By using existing facilities and installing a majority of refurbished tools, we believe we will be able to deliver a state-of-the-art 200mm capable fab at approximately one-third of the cost of a new fab.”
Cree首席履行官Gregg Lowe师长教师同时还暗示：“这些SiC碳化硅制造超等工场，将加快现今最快增加市场的立异。经由过程供给解决方案，帮忙提高EV电动汽车的行驶里程并削减充电时候，同时撑持5G收集在全球的摆设。我们相信这代表着SiC碳化硅和GaN氮化镓手艺和制造有史以来最年夜的本钱投资，也是一种在财务上负责任的体例。经由过程采取现有工场和安装绝年夜部门的整新东西，我们相信我们可以实现供给最早进手艺的200mm fab，而且本钱年夜约仅为一座新fab的1/3。”
The expanded campus also creates high-tech job opportunities and will serve as an advanced manufacturing workforce development initiative. Cree plans to partner with state and local community and four-year colleges to develop training programs to prepare its workforce for the long-term, high-quality employment and growth opportunities the new facilities will present.
About Cree, Inc.
Cree is an innovator of Wolfspeed power and radio frequency (RF) semiconductors, lighting class LEDs and lighting products. Cree’s Wolfspeed product families include silicon carbide materials, power-switching devices and RF devices targeted for applications such as electric vehicles, fast charging, inverters, power supplies, telecom and military and aerospace. Cree’s LED product families include blue and green LED chips, high-brightness LEDs and lighting-class power LEDs targeted for indoor and outdoor lighting, video displays, transportation and specialty lighting applications. Cree’s LED lighting systems and lamps serve indoor and outdoor applications. For additional product and Company information, please refer to www.cree.com.